Emission enhancement and its mechanism of Eu-doped GaN by strain engineering
نویسندگان
چکیده
منابع مشابه
Eu-doped GaN films grown on sapphire and GaAs substrates by RF magnetron sputtering
The growth of Eu-doped GaN (GaN:Eu) films has been performed on GaAs (100) substrates using RF magnetron sputtering method. The GaN layers exhibit a wurtzite structure. Substrate temperature and the pressure during the deposition do not influence the orientation of GaN:Eu films. After annealing of GaN films in NH3, a strong red luminescence at 622 nm due to Eu ions has been observed.
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ژورنال
عنوان ژورنال: Optical Materials Express
سال: 2017
ISSN: 2159-3930
DOI: 10.1364/ome.7.001381